III-V nitrides (AlN, GaN and InN) form one of the most intensively studied families of semiconductors, due to their potential wide applications in short-wave optoelectronics. The lattice mismatch and differences in thermal expansion coefficient values of the layer and of the substrate result in the occurrence of strain in the layers. As the physical properties of the layer are strain-dependent, the knowledge of the thermal expansion of the III­N layer material is of high importance. Detailed studies of the a and c lattice parameters in a broad temperature range are expected to be useful in development of short-wave optoelectronic devices.

Thermal expansion measurements require collecting of a diffraction patterns at a large number of temperature points. This task can be performed with the use of synchrotron radiation. The X-ray diffraction measurements using Debye-Scherrer geometry were carried out at a powder diffractometer (B2 beamline, HASYLAB/DESY) equipped with a He-closed-cycle cryostat and a furnace. In the low temperature experiments, the temperature was determined by a silicon diode while for high temperatures a NaCl internal standard was applied.

The dependence of a and c on temperature was studied in a broad range 11<T<1173 K. The results are consistent with previously collected (for limited T intervals) data [1-4]. The c/a ratio shows a weak tendency to decrease with temperature. This behavior is similar to that for InN reported in [5]. The free positional parameter, u, is found to be practically independent on T.

1. W. Paszkowicz et al., in: "Synchrotron Radiation Studies of Materials", Eds.: M. Lefeld-Sosnowska, J. Gronkowski, (Warsaw, 2000), pp. 183.
2. R.R. Reeber, K. Wang, J. Mater. Res. 15 (2000) 40.
3. M. Leszczynski et al., Acta Phys. Polon. A90 (1996) 887.
4. V. Kirchner et al., Appl. Phys. Lett. 77 (2000) 1434.
5. W. Paszkowicz, R. Cerny, S. Krukowski, Powder Diffrac. 18 (2003), in print.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/830 must be provided.

1. Defect distribution along needle-shaped PrVO₄ single crystals grown by the slow-cooling method
2. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
3. New Ca₁₀Li(VO₄)₇ laser host: growth and properties
4. Up-conversion and down-conversion processes observed in Er³⁺, Yb³⁺ and Mn²⁺ doped ZnAl₂O₄ nanoparticles
5. Synthesis and properties of up-converted NaYF₄: Er, Yb nanoparticles for biomedical applications
6. Structural, morphological and optical properties of ZnAl₂O₄ nanoparticles co-doped with Er³⁺and Yb³⁺ prepared by combustion aerosol synthesis.
7. Synthesis and properties of NaYF₄: Er, Yb, Gd nanoparticles with and without SiO₂ coating for biomedical applications.
8. Designing biosensors based on semiconductor nanoparticles for an early detection of neurodegenerative diseases.
9. High-pressure diffraction study of structural and elastic properties of zircon-type and scheelite-type RVO₄ (R = Nd, Eu)
10. Elastic properties of dysprosium orthovanadate: An in-situ powder-diffraction study
11. Thermal expansion of Si₃N₄ and Ge₃N₄
12. ZnO and core/shell ZnO/ZnS nanofibers: Characterization and applications
13. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
14. Synthesis of aluminum nitride nanopowder; compare methods for determination of the grain size in nanopowders 
15. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
16. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
17. Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
18. Pressure dependence of lattice parameter of Gadolinium Gallium Garnet crystals
19. Lattice parameters of hard materials in the low-temperature range
20. Lattice parameters of a wurtzite-type (Zn,Mg)Se crystal as a function of temperature
21. Rietveld refinement for Li₂Si₂O₅ doped with vanadium
22. High-pressure diffraction study of α and β Ge₃N₄
23. Resonance Raman scattering and lattice dynamics of GaMnN crystals
24. Effect of annealing on the structure and microstructure of Pr doped ZrO₂-Y₂O₃ nanocrystals
25. The materials science and powder diffraction beamline at ALBA
26. Influence of Lanthanum doping on the morphotropic phase boundary in lead zirconate titanate
27. Lead Free Piezoceramics. A combined neutron diffraction and TEM-study on the system BNT–BT–KNN
28. ZnO thin films for organic/inorganic heterojunctions
29. Optimisation of parameters of a dynamic penalty function for a test example of powder pattern indexing
30. Microscopy and spectroscopy techniques in characterization of thick GaN and Ga_1-xMn_xN layers grown by Sublimation Sandwich Method
31. Single crystals of gallium nitride doped with gadolinium- synthesis and properties.
32. Wide band-gap II-VI semiconductors for optoelectronic applications
33. Low temperature ZnMnO by ALD
34. Substrate effect on the ground state of the magnetic order in NSMO/YBCO superlattices
35. Method of Manganese co-doping of LT ZnO films
36. Ferromagnetism in ZnO:Mn thin films deposited by PEMOCVD
37. Structural characterization of GaN and Ga_1-xMn_xN layers obtained by Sandwich Sublimation Method
38. Structure properties of bulk ZnO crystals
39. Magnetic anisotropy and structural properties of ferromagnet/MgO/ferromagnet system
40. Rietveld refinement for polycrystalline indium nitride
41. LATTICE PARAMETERS OF INDIUM NITRIDE IN THE 22-310 K TEMPERATURE RANGE
42. Promising high quality short period Fe/Fe-N multilayers deposited by the sputtering
43. Growth and characterization of GaN and GaMnN layers obtained by Sublimation Sandwich Method
44. Structural and Magnetic Properties of Cr/Gd Multilayers Deposited on Sapphire and MgO Substrates
45. X-ray diffraction studies of thermal-expansion with the use of 1D detectors installed at synchrotron beamlines
46. Sensitivity of a genetic algorithm to the mutation rate parameter value: results for a crystallographic test
47. Rietveld refinement of powder diffraction data collected with a laboratory diffractometer equipped with a linear X-ray detector
48. Phase relationships in annealed Cu-Al-O layers
49. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
50. Area detector as a tool to study properties of the magnetic multilayers by the neutron scattering
51. Influence of hydrogen adsorption on magnetic properties of Fe films and multilayers
52. Close-Spaced Crystal Growth and Characterization of BP Crystals
53. GaN growth by Sublimation Sandwich Method
54. Transmission electron microscopy and X-ray diffraction study of α'-Al₂ CO crystals
55. Magnetotransport studies of Ga(Mn,Fe)N bulk crystals
56. Diamond as X-ray Wavelength Standard for Thermal-Expansion Studies Using Synchrotron Sources