Single crystals of gallium nitride doped with gadolinium- synthesis and properties.

Pawel Dominik 1Agnieszka Lenartowicz 1Sławomir Podsiadło 1Wojciech Zalewski 2Rajmund Bacewicz 2Cezariusz Jastrzebski 2Wojtek Gebicki 2Jacek Gosk 3Andrzej Twardowski 3

1. Warsaw University of Technology, Faculty of Chemistry, Noakowskiego 3, Warszawa 00-664, Poland
2. Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland
3. Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland

Abstract

During recent years rapid development of investigations over diluted magnetic semiconductors (DMSs) is observed. Gallium nitride is well known semiconductor, dopant of gadolinium in GaN lattice could result in ferromagnetic properties in this material. Mixture of gallium and gadolinium metals was used as a substrate in presented in this work research. Experiments were carried out in horizontal reactor with resistance heating at temperatures from 1150 to 1250oC in an ammonia atmosphere. Measurements involving SEM, Raman studies and EXAFS were used to investigate the single crystals obtained.

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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium H, by Pawel Dominik
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 15:50
Revised:   2009-06-07 00:44
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