Structural characterization of GaN and Ga1-xMnxN layers obtained by Sandwich Sublimation Method

Michal Kaminski ,  Pawel Dominik ,  Sławomir Podsiadło 

Warsaw University of Technology, Faculty of Chemistry, Noakowskiego 3, Warszawa 00-664, Poland

Abstract

Sandwich Sublimation Method allows to obtain layers of gallium nitride and gallium nitride doped with manganese. This method is cheap and fast. It doesn't need high pressure nor hazardous conditions. Experimental temperature is within the range 1100OC to 1200OC. Layers were grown on GaN thin films obtained by MOCVD. Reactions were carried out in a tubular quartz reactor with induction heating in a stream of ammonia. Obtained layers of GaN and Ga1-xMnxN were then characterized by various techniques.

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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium E, by Michal Kaminski
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-15 09:24
Revised:   2009-06-07 00:44
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