Sandwich Sublimation Method allows to obtain layers of gallium nitride and gallium nitride doped with manganese. This method is cheap and fast. It doesn't need high pressure nor hazardous conditions. Experimental temperature is within the range 1100^OC to 1200^OC. Layers were grown on GaN thin films obtained by MOCVD. Reactions were carried out in a tubular quartz reactor with induction heating in a stream of ammonia. Obtained layers of GaN and Ga_1-xMn_xN were then characterized by various techniques.

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1. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
2. Synthesis of aluminum nitride nanopowder; compare methods for determination of the grain size in nanopowders 
3. Resonance Raman scattering and lattice dynamics of GaMnN crystals
4. Microscopy and spectroscopy techniques in characterization of thick GaN and Ga_1-xMn_xN layers grown by Sublimation Sandwich Method
5. Single crystals of gallium nitride doped with gadolinium- synthesis and properties.
6. Rietveld refinement for polycrystalline indium nitride
7. LATTICE PARAMETERS OF INDIUM NITRIDE IN THE 22-310 K TEMPERATURE RANGE
8. Growth and characterization of GaN and GaMnN layers obtained by Sublimation Sandwich Method
9. Close-Spaced Crystal Growth and Characterization of BP Crystals
10. GaN growth by Sublimation Sandwich Method
11. Magnetotransport studies of Ga(Mn,Fe)N bulk crystals
12. X-Ray Study of Lattice Parameters of GaN in a Broad Temperature Range