Ultrafine grain and nanocrystalline materials show attractive properties. Aluminum nitride, well known semiconductor, as a nanopowder has got unique physical and chemical properities. It is attractive not only for applications in laser diodes, solar blind Photodiodes (PD), UV Light Emitting Diodes (LED) and high- temperature electronic devices but also for future light emitting systems based on aluminum nitride nanopowder and polymers. 

            The main goal of our research was to develop a method to synthesize nanopowder of aluminum nitride, which will be free from carbon. The reaction was carried out in horizontal tube furnace.  As a starting material we used a mixture of nanopowder α-Al₂O₃ (produced by Alfa-Aesar, particle size less than 60nm) and aluminum powder (3-5% by weight). As a source of nitrogen gaseous ammonia was used. The reaction can be expressed as follows:

Al₂O₃ + 2NH₃ → 2AlN + 3H₂O

The process was carried out in the temperature range 1050 -1350^oC for time 1- 5h. During our experiment we validated influence of parameters like: temperature, ammonia rate, duration of reaction, the regime of heating and cooling. The samples were investigated by:  powder X-ray diffraction (PXRD), Brunner-Emmett-Teller method (BET), scanning electron microscopy (SEM) and ramman studies. 

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