The synthesis and characterization of GaN and Ga_1-xMn_xN layers are reported. The layers were prepared by the modified Sublimation Sandwich Method (SSM). The GaN layers having a current maximum size of 200 mm thickness (10 mm x 10 mm area), and Ga_1-xMn_xN layers of 60 mm thickness (10mm x 10mm area) were obtained. Characterizations of the materials were performed using following methods: atomic force microscopy (AFM), Raman spectroscopy, electron microprobe, secondary ion mass spectrometry (SIMS). Electron probe measurements found the Ga_1-xMn_xN layers containing 4%at Mn. AFM studies showed that the GaN RMS roughness was found to increase with increasing of thickness. Raman investigations supported the conclusion on the well ordered structure of the prepared layers. SIMS measurements were accomplished in order to check the manganese concentration, as well as distribution of gallium, nitrogen and impurities - such as hydrogen, carbon, oxygen and silicon.

Supported by KBN 3T09B 056 28 from the State Committee for Scientific Research (Poland)

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