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Microscopy and spectroscopy techniques in characterization of thick GaN and Ga1-xMnxN layers grown by Sublimation Sandwich Method

Michal Kaminski 1Pawel Dominik 1Sławomir Podsiadło 1Wojtek Gebicki 2Michal Wozniak 3Rafal Jakiela 4Grzegorz Kamler 5

1. Warsaw University of Technology, Faculty of Chemistry, Noakowskiego 3, Warszawa 00-664, Poland
2. Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland
3. Warsaw University of Technology, Faculty of Materials Science and Engineering (InMat), Wołoska 141, Warszawa 02-507, Poland
4. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
5. Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland


The synthesis and characterization of GaN and Ga1-xMnxN layers are reported. The layers were prepared by the modified Sublimation Sandwich Method (SSM). The GaN layers having a current maximum size of 200 mm thickness (10 mm x 10 mm area), and Ga1-xMnxN layers of 60 mm thickness (10mm x 10mm area) were obtained. Characterizations of the materials were performed using following methods: atomic force microscopy (AFM), Raman spectroscopy, electron microprobe, secondary ion mass spectrometry (SIMS). Electron probe measurements found the Ga1-xMnxN layers containing 4%at Mn. AFM studies showed that the GaN RMS roughness was found to increase with increasing of thickness. Raman investigations supported the conclusion on the well ordered structure of the prepared layers. SIMS measurements were accomplished in order to check the manganese concentration, as well as distribution of gallium, nitrogen and impurities - such as hydrogen, carbon, oxygen and silicon.

Supported by KBN 3T09B 056 28 from the State Committee for Scientific Research (Poland)


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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium J, by Michal Kaminski
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-21 22:19
Revised:   2009-06-07 00:44