Sublimation Sandwich Method (SSM) [1] has proven successfully in the growth of both bulk AlN and SiC [2,3] and shows promise for growth of bulk GaN crystals as well. In our investigations, GaN layers were grown by the SSM. Experiments were carried out in a tubular quartz reactor with induction heating at temperatures from 1100OC to 1250OC. GaN layers, grown on Al2O3, obtained by MOCVD were used as the substrate. The area of deposition was 10x10mm. Monocrystaline GaN layers were obtained under atmospheric pressure during a deposition time from 5 to 60 minutes. GaN powder was used as the source of gallium and ammonia as the source of nitrogen. GaN powder and the substrate were placed in a quartz boat on top of a graphite cylinder, which was the heating element. To ensure gallium transfer, temperature gradient was employed between the gallium source and the MOCVD substrate. The obtained GaN layers possessed irregular surface morphology with a thickness range up to 1mm. Raman spectroscopy and X-ray studies were used to investigate the films.
[1] P.G. Baranov et al., MRS Internet J. Nitride Semicond. Res. 3, 50 (1998),
[2] J.H. Edgar et al., J. Cryst.Growth 246 (2002) 187,
[3] Y. Shi et al., J. Cryst.Growth 233 (2001) 177.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/1761 must be provided.

1. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
2. CVD of graphene on SiC
3. Pinned and unpinned epitaxial and sublimated graphene on SiC
4. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
5. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
6. Synthesis of aluminum nitride nanopowder; compare methods for determination of the grain size in nanopowders 
7. Resonance Raman scattering and lattice dynamics of GaMnN crystals
8. Lattice dynamics and Raman spectroscopy of ZnO:Mn crystals
9. Light polarized resonant Raman spectra from individual carbon nanotubes
10. Raman spectroscopy of single and multilayer graphene on SiC substrates
11. Microscopy and spectroscopy techniques in characterization of thick GaN and Ga_1-xMn_xN layers grown by Sublimation Sandwich Method
12. Single crystals of gallium nitride doped with gadolinium- synthesis and properties.
13. Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
14. Self-organized microstructure of TiO₂-MnO
15. Growth of high resistivity GaN layers by compensating defects generation
16. Effects of composition grading at the heterointefaces and Layers Thickness Variations on Bragg Mirror Quality
17. MOCVD growth and characterization of ultrathin AlN/GaN superlattices on 0001 sapphire substrates
18. Structural characterization of GaN and Ga_1-xMn_xN layers obtained by Sandwich Sublimation Method
19. Rietveld refinement for polycrystalline indium nitride
20. LATTICE PARAMETERS OF INDIUM NITRIDE IN THE 22-310 K TEMPERATURE RANGE
21. Growth and characterization of GaN and GaMnN layers obtained by Sublimation Sandwich Method
22. Electrical Properties of GaN/AlGaN Hetrostructures
23. Close-Spaced Crystal Growth and Characterization of BP Crystals
24. Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
25. Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
26. Problems with cracking of Al_xGa_1-xN layers
27. Magnetotransport studies of Ga(Mn,Fe)N bulk crystals
28. Studies of multiwall carbon nanotubes using Raman spectroscopy and AFM
29. X-Ray Study of Lattice Parameters of GaN in a Broad Temperature Range