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Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE

Rafał Jakieła 1,2A. Jasik 1,3Ewa Dumiszewska 1,3Dariusz Lenkiewicz 1,3Wlodek Strupinski 

1. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Warsaw University of Technology (PW), Warszawa, Poland


The diffusion characteristics of Mg dopant in MOVPE-grown GaN was studied. Cp2Mg, TMGa and NH3 were used as precursors. The Al2O3 was applied as a substrate. The temperatures range from 1000 C to 1300 C ensured conditions for device quality layers growth. Applying these temperatures, the back diffusion of magnesium were observed. Similar phenomenon was measured in Zn doped GaAs and InP.
Dopant profiles were investigated by Secondary Ions Mass Spectrometry (SIMS). We studied the effect of Cp2Mg partial pressure and growth temperature on diffusion profile and on diffusion coefficient of Mg atoms.
Abrupt diffusion profile was observed when Cp2Mg partial pressure was increased. Mg diffusion coefficient dependency on concentration was obtained from Boltzman-Matano analysis of dopant profile. Applying this method it was shown that diffusion coefficient was increasing by more than one order of magnitude within the concentration range: 5x1017 - 1x1020 cm-3.
Increasing growth temperature of Mg doped GaN caused shift of diffusion profiles towards layer-substrate interface. Activation energy EA and independent temperature factor DO were calculated by applying the profiles shift.


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Presentation: poster at E-MRS Fall Meeting 2003, Symposium C, by Rafał Jakieła
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-16 16:52
Revised:   2009-06-08 12:55