The diffusion characteristics of Mg dopant in MOVPE-grown GaN was studied. Cp2Mg, TMGa and NH3 were used as precursors. The Al₂O₃ was applied as a substrate. The temperatures range from 1000 C to 1300 C ensured conditions for device quality layers growth. Applying these temperatures, the back diffusion of magnesium were observed. Similar phenomenon was measured in Zn doped GaAs and InP.
Dopant profiles were investigated by Secondary Ions Mass Spectrometry (SIMS). We studied the effect of Cp₂Mg partial pressure and growth temperature on diffusion profile and on diffusion coefficient of Mg atoms.
Abrupt diffusion profile was observed when Cp₂Mg partial pressure was increased. Mg diffusion coefficient dependency on concentration was obtained from Boltzman-Matano analysis of dopant profile. Applying this method it was shown that diffusion coefficient was increasing by more than one order of magnitude within the concentration range: 5x10¹⁷ - 1x10²⁰ cm^-3.
Increasing growth temperature of Mg doped GaN caused shift of diffusion profiles towards layer-substrate interface. Activation energy E_A and independent temperature factor D_O were calculated by applying the profiles shift.

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