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Wlodek Strupinski
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Affiliation:
Institute of Electronic Materials Technology
address:
Wólczyńska 133, Warszawa, 01-919,
Poland
phone:
22 835 30 41
fax:
22 834 90 03
web:
http://www.itme.edu.pl
Participant:
E-MRS Fall Meeting 2004
began:
2004-09-06
ended:
2004-09-10
Presented:
E-MRS Fall Meeting 2004
Electrical Properties of GaN/AlGaN Hetrostructures
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
CVD of graphene on SiC
Publications:
CVD of graphene on SiC
Electrical Properties of GaN/AlGaN Hetrostructures
GaN growth by Sublimation Sandwich Method
Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
Growth of high resistivity GaN layers by compensating defects generation
Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
MOCVD growth and characterization of ultrathin AlN/GaN superlattices on 0001 sapphire substrates
Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
Pinned and unpinned epitaxial and sublimated graphene on SiC
Problems with cracking of Al_xGa_1_-_xN layers
Raman spectroscopy of single and multilayer graphene on SiC substrates
Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
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