Raman spectroscopy of single and multilayer graphene on SiC substrates

Kacper Grodecki 1,2Andrzej Wysmolek 1Rafał Bożek 1Roman Stępniewski 1Jacek Baranowski 1Jolanta Borysiuk 2Wlodek Strupinski 2

1. University of Warsaw, Institute of Experimental Physics (IFDUW), Hoża 69, Warsaw 00-681, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland


Graphene obtained by annealing of silicon carbide (SiC) substrates has recently attracted a lot of interest as a promising material for future carbon-based electronics. On the contrary to graphene made by micromechanical cleavage [1], epitaxial graphene [2] is  compatible with industrial processing techniques.  However, the electronic and optical properties of the epitaxial graphene can be substantially modified by interaction with the SiC substrate.

Raman spectroscopy has been proved to be very efficient and useful method to study single- and multi-layer graphene structures. In this communication Raman spectroscopy  of epitaxial graphene are presented. Investigated samples were prepared in Epigress VP508 SiC hot wall CVD reactor on 4H-SiC(0001) substrates with Si and C polarity as well as with exact and 4° off orientation. The appearance of single and/or multiple graphene layers on the SiC surface was verified by Scanning Tunneling Microscopy and Transmission Electron Microscopy. Micro-Raman experiments where performed at room temperature, using 532 nm line from Nd-YAG as a source of continuous wave excitation. Highly oriented pyrolitic Graphite (HOPG) was used as a reference sample.        

It is observed that the Raman shifts of characteristic 2D bands observed for layers deposited on Si-face of the SiC substrates are blue shifted with respect to the 2D peak observed for the graphene made by micromechanical cleavage [4] as well as the G’ band of reference HOPG sample. Interestingly the blue shift as well as the FWHM of the 2D transition observed for the 40 off-axis substrate is larger than measured for on-axis sample. The observed effects could be explained in terms of strain induced by 4H-SiC substrates. Other mechanisms including unintentional doping are also discussed.

[1]  K.S. Novoselov et al. Science 306, 666 (2004)

[2] C. Berger et al. J. Phys. Chem. B 108, 19912 (2004)

[4] A. C. Ferrari, Solid State Commun. 143, 47 (2007)

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/16043 must be provided.


Related papers
  1. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
  2. CVD of graphene on SiC
  3. Impact of internal electric fields for GaInN/GaN quantum wells in light emitting diodes
  4. Influence of  SiC substrate orientation on epitaxial graphene quality studied by Raman spectroscopy
  5. Pinned and unpinned epitaxial and sublimated graphene on SiC
  6. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
  7. Graphene epitaxy by chemical vapor deposition on SiC.
  8. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
  9. Magnetoplasma and impurity excitations in GaAs studied by resonant Raman scattering in high magnetic fields
  10. Study of synthesis and formation mechanisms of nanometric magnesium alumina spinel powders
  11. 2D and 3D growth mode of nitride layers
  12. Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
  13. Structure and magnetic properties of carbon encapsulated Fe nanoparticles obtained by arc plasma synthesis
  14. Growth of high resistivity GaN layers by compensating defects generation
  15. Initial Stage of SiC Crystal Growth by PVT Method
  16. MOCVD growth and characterization of ultrathin AlN/GaN superlattices on 0001 sapphire substrates
  17. Spontaneous Superlattice Formation in MOCVD Growth of AlGaN
  18. Electrical Properties of GaN/AlGaN Hetrostructures
  19. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
  20. Recombination Dynamics in GaN/AlGaN Low Dimensional Structures Obtained by SiH4 Treatment
  21. GaN growth by Sublimation Sandwich Method
  22. Electroreflectance and photoreflectance studies of AlGaN/GaN heterostructure with a QW placed inside AlGaN layer
  23. Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
  24. Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
  25. Problems with cracking of AlxGa1-xN layers
  26. Optical Detection of 2DEG in GaN/AlGaN Structures - High Magnetic Field Studies
  27. Light induced contrast in Kelvin Force Microscopy of GaN epilayers

Presentation: Poster at E-MRS Fall Meeting 2008, Symposium A, by Andrzej Wysmolek
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-19 21:56
Revised:   2008-06-13 16:33
Web science24.com
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine