Jacek Baranowski

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interest(s):

Affiliation:


Warsaw University, Faculty of Physics

address: Hoża 69, Warszawa, 00-681, Poland
phone: +48 22 5532123
fax: +48 22 6252336
web: http://www.fuw.edu.pl

Affiliation:


Institute of Electronic Materials Technology

address: Wólczyńska 133, Warszawa, 01-919, Poland
phone: 22 835 30 41
fax: 22 834 90 03
web: http://www.itme.edu.pl

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

Participant:


E-MRS Fall Meeting 2004

began: 2004-09-06
ended: 2004-09-10
Presented:

Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Participant:


Warsaw and Karlsruhe Nanotechnology Day

began: 2011-09-22
ended: 2011-09-22
Presented:

Warsaw and Karlsruhe Nanotechnology Day

Graphene epitaxy by chemical vapor deposition on SiC.

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

Publications:


  1. 2D and 3D growth mode of nitride layers
  2. Electroreflectance and photoreflectance studies of AlGaN/GaN heterostructure with a QW placed inside AlGaN layer
  3. Graphene epitaxy by chemical vapor deposition on SiC.
  4. Influence of  SiC substrate orientation on epitaxial graphene quality studied by Raman spectroscopy
  5. Light induced contrast in Kelvin Force Microscopy of GaN epilayers
  6. Optical Detection of 2DEG in GaN/AlGaN Structures - High Magnetic Field Studies
  7. Pinned and unpinned epitaxial and sublimated graphene on SiC
  8. Raman spectroscopy of single and multilayer graphene on SiC substrates
  9. Recombination Dynamics in GaN/AlGaN Low Dimensional Structures Obtained by SiH_4 Treatment
  10. Spontaneous Superlattice Formation in MOCVD Growth of AlGaN



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