Graphene is an atomically flat sheet of carbon atoms arranged in a two-dimensional honeycomb lattice. Each carbon atom is covalently bound to its nearest neighbors by sp² s and by resonant p bonds. The p resonant bonds leads to unusual band structure, in which carriers behave as relativistic Dirac fermions. These offer possibility to create devices that have no analog in silicon based electronics. On the other hand sp² s bonds are responsible for extraordinary mechanical properties of this material.

Review of electronic, mechanical and optical properties of graphene will be presented. In addition, methods of growth of a large area of epitaxial graphene by Chemical Vapor Deposition on SiC will be described. It will be shown that the epitaxial graphene grown on SiC and metals have significant potential for electronic applications and lead to wide range of unique devices.

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1. Influence of  SiC substrate orientation on epitaxial graphene quality studied by Raman spectroscopy
2. Pinned and unpinned epitaxial and sublimated graphene on SiC
3. Raman spectroscopy of single and multilayer graphene on SiC substrates
4. 2D and 3D growth mode of nitride layers
5. Spontaneous Superlattice Formation in MOCVD Growth of AlGaN
6. Recombination Dynamics in GaN/AlGaN Low Dimensional Structures Obtained by SiH₄ Treatment
7. Electroreflectance and photoreflectance studies of AlGaN/GaN heterostructure with a QW placed inside AlGaN layer
8. Optical Detection of 2DEG in GaN/AlGaN Structures - High Magnetic Field Studies
9. Light induced contrast in Kelvin Force Microscopy of GaN epilayers