Graphene epitaxy by chemical vapor deposition on SiC.
Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland
Graphene is an atomically flat sheet of carbon atoms arranged in a two-dimensional honeycomb lattice. Each carbon atom is covalently bound to its nearest neighbors by sp2 s and by resonant p bonds. The p resonant bonds leads to unusual band structure, in which carriers behave as relativistic Dirac fermions. These offer possibility to create devices that have no analog in silicon based electronics. On the other hand sp2 s bonds are responsible for extraordinary mechanical properties of this material.
Review of electronic, mechanical and optical properties of graphene will be presented. In addition, methods of growth of a large area of epitaxial graphene by Chemical Vapor Deposition on SiC will be described. It will be shown that the epitaxial graphene grown on SiC and metals have significant potential for electronic applications and lead to wide range of unique devices.
Presentation: Invited oral at Warsaw and Karlsruhe Nanotechnology Day, by Jacek Baranowski
See On-line Journal of Warsaw and Karlsruhe Nanotechnology Day
Submitted: 2011-06-08 11:25 Revised: 2011-08-29 17:38