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dr Jolanta Borysiuk
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Affiliation:
Institute of Electronic Materials Technology
address:
Wólczyńska 133, Warszawa, 01-919,
Poland
phone:
22 835 30 41
fax:
22 834 90 03
web:
http://www.itme.edu.pl
Participant:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
began:
2007-05-20
ended:
2007-05-24
Presented:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
Structure and magnetic properties of carbon encapsulated Fe nanoparticles obtained by arc plasma synthesis
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
Publications:
Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
Growth of high resistivity GaN layers by compensating defects generation
Impact of internal electric fields for GaInN/GaN quantum wells in light emitting diodes
Raman spectroscopy of single and multilayer graphene on SiC substrates
Structure and magnetic properties of carbon encapsulated Fe nanoparticles obtained by arc plasma synthesis
Study of synthesis and formation mechanisms of nanometric magnesium alumina spinel powders
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