Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
|Barbara Chwalisz 2, Andrzej Wysmołek 2, Krzysztof P. Korona 2, Roman Stępniewski 2, Czeslaw Skierbiszewski 1, Izabella Grzegory 1, Sylwester Porowski 1|
1. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
Temperature and excitation power behaviour of the emission from low dimensional structures can provide important information about localisation effects, strain and electric field distribution. Usually it is difficult to separate the contribution of the particular effect on the observed photoluminescence. In order to understand the influence of those effects photoluminescence measurements in the temperature range 4.2-300K on GaN/AlGaN quantum wells (QW) of different width were performed.
Presentation: oral at E-MRS Fall Meeting 2004, Symposium C, by Barbara Chwalisz
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-05-19 18:03 Revised: 2009-06-08 12:55
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