prof Sylwester Porowski

Affiliation:

Institute of High Pressure Physics, PAS

Participant:

High Pressure School 2001 (4th)

Participant:

E-MRS Fall Meeting 2003

Participant:

Nano PL 2014

Publications:

1. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
2. Bowing of epitaxial structures grown on bulk GaN substrates
3. Built-in electric fields in group III-nitride light emitting quantum structures
4. Compensation mechanisms in magnesium doped GaN
5. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
6. Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy
7. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
8. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.

9. GaN(0001) surface Fe atoms doped

10. Mass flow and reaction analysis of the growth of GaN layers by HVPE