prof Sylwester Porowski

e-mail:
phone: +48-22-6325010
fax: +48-22-6324218
web:
interest(s):

Affiliation:


Institute of High Pressure Physics, PAS

address: Sokolowska 29/37, Warszawa, 01-142, Poland
phone: +48-22-6325010
fax:
web: http://w3.unipress.waw.pl/nano/

Participant:


High Pressure School 2001 (4th)

began: 2001-06-22
ended: 2001-06-25
Presented:

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

Participant:


Nano PL 2014

began: 2014-10-15
ended: 2014-10-18
Presented:

Publications:


  1. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
  2. Bowing of epitaxial structures grown on bulk GaN substrates
  3. Built-in electric fields in group III-nitride light emitting quantum structures
  4. Compensation mechanisms in magnesium doped GaN
  5. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  6. Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy
  7. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
  8. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
  9. GaN(0001) surface Fe atoms doped

  10. Mass flow and reaction analysis of the growth of GaN layers by HVPE




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