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Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
|Bogdan J. Kowalski 2, Iwona A. Kowalik 2, Ryszard J. Iwanowski 2, Bronislaw A. Orlowski , Elżbieta Lusakowska 2, Janusz Sadowski 2,4,5, Robert L. Johnson 3, Izabella Grzegory 1, Sylwester Porowski 1|
1. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
Gallium nitride (apart from its optoelectronic applications) is a system particularly interesting from the point of view of surface physics research. Its surfaces may reconstruct in various ways depending on formation conditions (surface polarity, preparation method, and presence of impurities). Moreover, doping with transition metals may transform GaN into a ferromagnetic semiconductor. Annealing of Mn/GaN is considered as a technique suitable for fabrication of this material.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium B, by Bogdan J. Kowalski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-24 20:15 Revised: 2009-06-08 12:55