A surface layer of disordered structure is created in Si crystal as a result of implantation with ions of a respectively high dose. Different types of defects have been observed depending on the implant species, the implant dose and the annealing temperature [1, 2]. Recently, one takes interest in an influence of the implanted ions mass from group IV: Si, Ge, Sn on the type of structural defects created in the silicon matrix [3-7]. For crystal-lattice reconstruction of the disturbed near-surface layer pulsed laser annealing can be used, as an efficient, fast and well-controlled technique . Laser annealing induces migrations of defects created by implantation process and initiates dopant diffusion.
In the present paper the influence of implanted Sn ions on the defect structure in laser annealed thin near-surface layer is considered. Regions irradiated with different energy densities of the laser beam are compared. A XeCl laser with the pulse duration of 30 ns (FWHM) generates laser light pulses with the wavelength of 308 nm. Evolution of defect structure during nanosecond pulse annealing has been characterized by reflection high-energy electron diffraction, interference polarizing microscopy and atomic force microscopy.
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