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Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse
|Dorota Klinger 1, Julian Auleytner , Danuta Zymierska 1, Bolesław Kozankiewicz 1, Elżbieta Lusakowska 1|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
A surface layer of disordered structure is created in Si crystal as a result of implantation with ions of a respectively high dose. Different types of defects have been observed depending on the implant species, the implant dose and the annealing temperature [1, 2]. Recently, one takes interest in an influence of the implanted ions mass from group IV: Si, Ge, Sn on the type of structural defects created in the silicon matrix [3-7]. For crystal-lattice reconstruction of the disturbed near-surface layer pulsed laser annealing can be used, as an efficient, fast and well-controlled technique . Laser annealing induces migrations of defects created by implantation process and initiates dopant diffusion.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Dorota Klinger
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-09 16:44 Revised: 2009-06-08 12:55