Elżbieta Lusakowska

Affiliation:

Polish Academy of Sciences, Institute of Physics

Publications:

1. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
2. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
3. Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse
4. Effect of high pressure annealing on defect structure of GaMnAs
5. Evidence of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
6. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
7. Gd atoms on Si (111) surface – AFM and photoemission study
8. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
9. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
10. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
11. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
12. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
13. Nanostructure of laser annealed Ge-implanted near-surface Si layers
14. Structure characterisation of MBE-grown ZnSe:Cr layers
15. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
16. Wide band-gap II-VI semiconductors for optoelectronic applications
17. ZnO thin films for organic/inorganic heterojunctions