The problem of the influence of fast nitrogen ion implantation on the structure of GaAs is considered. GaAs single crystal was irradiated with a medium dose of 2.85 MeV/n (total energy equal to 40 MeV) nitrogen ions. Previously we showed that a buried layer was created at a depth of the mean ion range. The determination of the structure of this layer is difficult because it is only a small fraction of the whole volume of the sample studied. For this purpose we proposed the experimental strategy for the X-ray diffractometric research of very small polycrystalline precipitates within a single crystal matrix. It was shown that it was possible to reveal the diffraction lines from an additional polycrystalline phase of concentration much below 0.5%, being the limit of standard powder diffraction method. The recording of these lines was possible due to the lowering of the diffractometer background by means of the set consisting of the precise bent quartz monochromator of diffracted beam and a Soller slit, as well as by the rotation of a single crystal sample out of Bragg condition by the angle large enough. In the present paper we apply this diffractometric method to investigation of the buried layer consisting of small precipitates of an additional phase, different from the GaAs single crystal matrix.

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