The aim of the research was to determine structural changes induced by heavy ion implantation in single crystals. Previously it was shown that the direction of radiation flow is changed in the ion shot-through layer at the depth corresponding to the ion mean range. In order to perform new experiments of ion implantation, we planed and constructed the special irradiation chamber for the heavy ion multiple implantation, which allows one to irradiate different places on the surface of a studied crystal without necessity of opening it. The device is equipped with the special tantalum diaphragm, which suffers implantation to be performed in the strictly determined regions of sample. Such construction makes possible to repeat the implantation process many times without renewal pumping, which effects in large saving of time and work.
As an example of the use of the chamber the implantation of quartz single crystal with 2.0 MeV/amu Ar ions at three different doses is presented. The X-ray study results are discussed.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/1049 must be provided.

1. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
2. Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration
3. Modification of the nanostructure of the amorphised Si near-surface layer
4. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
5. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
6. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
7. X-ray diffractometric study of micro-precipitates created by fast nitrogen ions in GaAs single crystal
8. Nanostructure of laser annealed Ge-implanted near-surface Si layers
9. Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse