The important element of modern Al_xGa_1-xAs semiconductor lasers is an insulating buried layer introduced by selective implantation with He or H ions. The difficulty in obtaining of such layers is connected with controlling of strain and defects introduced by implantation, which may disturb the action of the laser. The strain may be however controlled in less complicated laterally homogenous structures or even single implanted layer.

The insulated buried layers obtained by the implantatation of 150 keV He ions to Al_xGa_1-xAs with various concentration of Al and GaAs were studied with different synchrotron diffraction methods exploring both white and monochromatic beam. The selected samples were studied with high resolution transmission electron microscopy. The implantation were performed in from room temperature, 80º C and 120º C. The doses were in the range from 2 x 10¹⁶ to 6 x 10¹⁶ cm^-2. The synchrotron experiment included taking local rocking curves using small 50 x 50 µm² probe beam. The rocking curves exhibited characteristic sequence of interference maxima and enabled the analysis of the strain profiles by fitting the theoretical rocking curves obtained by numerical integration of the Takagi-Taupin equations. The white beam synchrotron back reflection topography revealed a sequence of strain modulation fringes similar to the main interference maxima in the rocking curves. They also confirm the uniformity of applied dose and lack of extended crystallographic defects which could be caused by implantation. The characteristic feature of the evaluated profiles was the existence of the deformed region close to the surface which points that the deformation is mainly caused by the point defects produced by incident ions and the recoils. The other feature increasing with the temperature of implantation was the flattening of top part of the strain maximum corresponding to the insulating buried layer. This flattening was more distinct for
[ABSTRACT TRUNCATED TO 2000 LETTERS]

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/3857 must be provided.

1. New Ca₁₀Li(VO₄)₇ laser host: growth and properties
2. Characterization of the defect structure in gadolinium orthovanadate single crystals grown by the Czochralski method
3. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
4. Synchrotron topographic studies of domain structure in Czochralski grown Pr_xLa_1-xAlO₃ crystals
5. Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals
6. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
7. Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography
8. Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
9. The investigation of structural perfection and facetting in highly Er - doped Yb₃Al₅O₁₂ crystals
10. Observation of defects in g - irradiated Cz-si annealed under high pressure
11. X-ray topography of Ca_0.5Sr_0.5NdAlO₄ single crystal
12. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
13. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
14. X-ray study of quartz single crystals implanted with fast Ar ions
15. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing