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Wojciech Wierzchowski
e-mail: | ***@sp.itme.edu.pl |
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Affiliation: |
Institute of Electronic Materials Technology
address: | Wólczyńska 133, Warszawa, 01-919, Poland | phone: | 22 835 30 41 | fax: | 22 834 90 03 | web: | http://www.itme.edu.pl | |
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Publications: |
- Characterization of the defect structure in gadolinium orthovanadate single crystals grown by the Czochralski method
- Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
- Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals
- New Ca10Li(VO4)7 laser host: growth and properties
- Observation of defects in g - irradiated Cz-si annealed under high pressure
- Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography
Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration - Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
- Synchrotron topographic studies of domain structure in Czochralski grown PrxLa1-xAlO3 crystals
- Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
- The investigation of structural perfection and facetting in highly Er - doped Yb3Al5O12 crystals
- Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
- X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal
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