Wojciech Wierzchowski

Affiliation:

Institute of Electronic Materials Technology

Participant:

E-MRS Fall Meeting 2003

Participant:

E-MRS Fall Meeting 2005

Participant:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Participant:

IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

Publications:

1. Characterization of the defect structure in gadolinium orthovanadate single crystals grown by the Czochralski method
2. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
3. Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals
4. New Ca₁₀Li(VO₄)₇ laser host: growth and properties
5. Observation of defects in g - irradiated Cz-si annealed under high pressure
6. Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography

7. Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration

8. Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
9. Synchrotron topographic studies of domain structure in Czochralski grown Pr_xLa_1-xAlO₃ crystals
10. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
11. The investigation of structural perfection and facetting in highly Er - doped Yb₃Al₅O₁₂ crystals
12. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
13. X-ray topography of Ca_0.5Sr_0.5NdAlO₄ single crystal