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Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
|Eliana Kaminska , Anna Piotrowska , Artur Szczesny 1,5, Radoslaw Lukasiewicz 1, Andrian V. Kuchuk , Krystyna Golaszewska , Renata Kruszka , Adam Barcz , Rafał Jakieła 4, Elzbieta Dynowska 3, Anna Stonert 2, Andrzej Turos 2,4|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
Reliable Schottky contact for AlGaN/GaN high electron mobility transistor (HEMT) should use low resistivity, large work function metal. Moreover, the metallisation for this application should withstand high-temperature treatments during device processing (realisation of self-aligned HEMT) without change of structure, electrical conductivity and composition, and be stable in contact with the semiconductor. Recently, several studies have demonstrated the applicability of RuO2 as Schottky contact to n-GaN. Ru and RuO2 are high melting point materials, characterised by low resistivity and work function > 5 eV.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Eliana Kaminska
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-05-20 20:25 Revised: 2009-06-08 12:55