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Adam Barcz

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Affiliation:


Institute of Electron Technology

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: (4822)5487792
fax: (4822)8470631
web: http://www.neti.ite.waw.pl

Affiliation:


Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Publications:


  1. Effect of Ca&P ions implantation on the corrosion resistance and biocompatibility of titanium
  2. Effect of high pressure annealing on defect structure of GaMnAs
  3. Effect of stress on structural transformations in GaMnAs
  4. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
  5. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  6. Luminescent properties of wide bandgap materials at room temperature
  7. Optical properties of p-type ZnO:(N, As, Sb)
  8. Diffusion of Mn in gallium arsenide.

  9. p-type conducting ZnO: fabrication and characterisation
  10. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
  11. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  12. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  13. Structure and Magnetization of Defect-Associated Sites in Silicon
  14. Structure of Si:Mn annealed under enhanced stress conditions
  15. Study of Long-Term Stability of Ohmic Contacts to GaN
  16. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  17. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  18. The role of radiation defects in HgCdTe epitaxial growth
  19. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells



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