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Adam Barcz
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Affiliation:
Institute of Electron Technology
address:
al. Lotników 32/46, Warszawa, 02-668,
Poland
phone:
(4822)5487792
fax:
(4822)8470631
web:
http://www.neti.ite.waw.pl
Affiliation:
Polish Academy of Sciences, Institute of Physics
address:
al. Lotników 32/46, Warszawa, 02-668,
Poland
phone:
+48-22-8436601
fax:
+48-22-8430926
web:
http://www.ifpan.edu.pl
Publications:
Effect of Ca&P ions implantation on the corrosion resistance and biocompatibility of titanium
Effect of high pressure annealing on defect structure of GaMnAs
Effect of stress on structural transformations in GaMnAs
ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
Luminescent properties of wide bandgap materials at room temperature
Optical properties of p-type ZnO:(N, As, Sb)
Diffusion of Mn in gallium arsenide.
p-type conducting ZnO: fabrication and characterisation
Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
Structure and Magnetization of Defect-Associated Sites in Silicon
Structure of Si:Mn annealed under enhanced stress conditions
Study of Long-Term Stability of Ohmic Contacts to GaN
TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
The role of radiation defects in HgCdTe epitaxial growth
Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
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