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Study of Long-Term Stability of Ohmic Contacts to GaN
|Krystyna Golaszewska 2, Eliana Kaminska 2, Anna Piotrowska 2, Renata Kruszka 2, Andrian V. Kuchuk 2, Ewa Papis 2, Roman Szeloch 1, Pawel Janus 1, Teodor Gotszalk 1, Adam Barcz 2,3, Andrzej Wawro 3|
1. Wrocław University of Technology, Wybrzeże Wyspiańskiego, Wrocław 50-370, Poland
In view of the success of GaN-based photonic and electronic devices we have performed a study of long-term stability of ohmic contacts to GaN. The specific focus of the work was on thermally stable metallizations using transition metal nitrides (ZrN, NbN, TiN). Because of their high electrical conductivity and thermal stability these compounds are materials of choice for diffusion barriers in metallization systems. Moreover, transition metals have been shown effective in providing low-resistivity contacts to n-type GaN (by depleting its superficial film for nitrogen and creating thus a highly doped subcontact region) and p-type GaN (by extracting hydrogen from the subcontact region).
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Krystyna Golaszewska
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 09:48 Revised: 2009-06-08 12:55