The work is devoted to relationships between structural, electro-physical and diffusion barrier properties of W-Ti-N thin films, prepared by reactive dc magnetron sputtering from W-Ti (30 at.%) target in Ar-N₂ gas mixture. A dc power density of 1.7 W/cm² was applied to the target and the partial pressure of nitrogen was varied from 0 to 3.5x10^-3 mbar at a total gas pressure of 5x10^-3 mbar.
Phase composition and crystallite size were studied using X-ray diffraction method (Philips X'Pert MPD diffractometer with CuKα₁ radiation, equipped with a Johansson monochromator and a linear semiconductor strip detector). Surface morphology and root-mean square (RMS) roughness was examined using atomic force microscopy (NanoScope IIIa Dimension 3000 TM). The conductivity, stress and composition of W-Ti-N films were investigated using four-point probe sheet resistance measurements, stress measurement optical system and Rutherford backscattering spectrometry.
About ten layered samples were studied differing by nitrogen partial pressure applied during deposition. With increasing nitrogen partial pressure, the deposition rates decreased, what may be explained by lower efficiency of the nitrogen atoms with regard to argon atoms. Between the values of p_N2 = 0.2 and 0.5x10^-3 mbar, the deposition rate drops more steeply, which is indicative of changes in the sputtering mode (transition from a metallic to a nitride target), as well as in the film structure (from amorphous to polycrystalline films).
The resistivity of pure W₈₈Ti₂₂ film was 100 μΩcm and rose slowly up to 365 μΩcm for the ternary W₄₂Ti₁₂N₄₆ film. When the nitrogen partial pressure reaches p_N2 = 3.5x10^-3 mbar, the resistivity of W₃₄Ti₁₁N₅₅ film is 850 μΩcm, which may be attributed to the reduction in crystalline size.

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