|Search for content and authors|
Structural analysis of reactively sputtered W-Ti-N thin films
|Andrian V. Kuchuk 2, Vasyl P. Kladko 2, Volodymyr F. Machulin 2, Anna Piotrowska 1, Roman Minikayev 3, Oksana S. Lytvyn 2|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
The work is devoted to relationships between structural, electro-physical and diffusion barrier properties of W-Ti-N thin films, prepared by reactive dc magnetron sputtering from W-Ti (30 at.%) target in Ar-N2 gas mixture. A dc power density of 1.7 W/cm2 was applied to the target and the partial pressure of nitrogen was varied from 0 to 3.5x10-3 mbar at a total gas pressure of 5x10-3 mbar.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium D, by Andrian V. Kuchuk
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-07-12 16:14 Revised: 2009-06-08 12:55