The results of investigation of In_0.3Ga_0.7As/GaAs superlattices with quantum wires by High-Resolution X-Ray Scattering are presented. The influence of lattice distortion on rocking curves (RC) was analyzed with dynamical theory of diffraction. It allowed explaining azimuth dependence of experimental rocking curves. Anisotropic changes in the shape of InGaAs lattice unit cell were shown and measured.
The influence of smooth borders between hetero-layers was analyzed. Comparative analysis of influence of different gradient functions in the hetero-border on rocking curves was done. Parameters of hetero-interfaces in our samples were determined with the help of RC modeling.
The influence of shot time annealing (30sec) with different temperatures on quantum wires was observed. Increasing of lateral mass transfer with increasing of annealing temperature was observed.
If smooth hetero-interface and anisotropic distortions in unit cell are not considered, wrong determination of structure parameters (both period of superlattice and ratio of layers thicknesses) may occur.
The result obtained allowed us to find the regularity in structure changes under the influence of annealing and to investigate features of elastic deformations relaxation in space ordered InGaAs quantum wires. It is very important for quantum-size objects physical properties understanding.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/3847 must be provided.

1. Relationship between condition of deposition and properties of W-Ti-N thin films prepared by reactive magnetron sputtering
2. Structural analysis of reactively sputtered W-Ti-N thin films
3. Diffusion barrier properties of reactively sputtered W-Ti-N thin films