Fabrication of GaSb microlenses by photo and e-beam lithography and dry etching
|Ewa Papis 1, Anna Piotrowska 1, Eliana Kaminska 1, Tadeusz T. Piotrowski 1, Krystyna Golaszewska 1, Jacek Ratajczak 1, Jerzy Katcki 1, Jerzy Wrobel 2|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
GaSb and related semiconductors are well recognised for their potential application in mid-infrared optoelectronics and thermophotovoltaics. We have recently demonstrated fabrication of DH InGaAsSb/AlGaAsSb/GaSb mid-IR photodetectors with detectivity ranged from 5x1010 to 2x1011 cmHz1/2/W, depending on the active area and cutoff wavelength.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium F, by Ewa Papis
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-26 16:39 Revised: 2009-06-08 12:55
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