The IrSi_x ohmic contacts has been used in modern Accumulated Low Schottky Barrier MOSFET on SOI. An IrSi_x layer has been formed as a result of metallurgical reaction between metal and semiconductor during annealing. The process of iridium silicide formation in the Ir/Si/SiO₂/Si structure has been studied by means of cross-sectional transmission electron microscopy (XTEM). The influence of annealing temperatures (300, 600, 900^oC) on the Ir/Si interface was analysed. The formation of a thin IrSi_x layer was observed at a temperature as low as 300^oC.In the Ir/Si/SiO₂/Si structure annealed at 600^oC the Ir atoms penetrated the Si layer, causing disturbance of the Ir/Si interface. IrSi_x grains were formed in Si after annealing at 900^oC. An expansion of the IrSi_x grains in the Si layer was observed. TEM results were correlated with XPS and electrical measurements.

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