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dr Jacek Ratajczak

e-mail:
phone: +48-22-5487763
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Affiliation:

Institute of Electron Technology

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: (4822)5487792
fax: (4822)8470631
web: http://www.neti.ite.waw.pl

Publications:
  1. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
  2. Determination of densities of various dislocation types in GaN – comparison of TEM and improved hot acid etching method
  3. Fabrication of GaSb microlenses by photo and e-beam lithography and dry etching
  4. Measurement of distorting magnetic field inside the scanning electron microscope with the use of microscope itself

  5. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

  6. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  7. TEM study of iridium silicide contact layers for Low Schottky Barrier MOSFETs
  8. Transmission Electron Microscopy of Iridium Silicide Contacts for Advanced MOSFET Structures with Schottky Source and Drain



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