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Anna Piotrowska

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Affiliation:

Institute of Electron Technology

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: (4822)5487792
fax: (4822)8470631
web: http://www.neti.ite.waw.pl

Publications:
  1. Application of Ti-Al-N MAX-phase for contacts to GaN
  2. Characterization of Ir and IrO2 Schottky contacts on n-type 4H-SiC under high temperature stress
  3. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
  4. Determination of stress in composite engineered substrates for GaN-based RF power devices
  5. Diffusion barrier properties of reactively sputtered W-Ti-N thin films
  6. Fabrication of GaSb microlenses by photo and e-beam lithography and dry etching
  7. NANOCOMPOSITE PHOTONIC SENSORS: FIRST APPROACH BY THE NANOPHOS INITIATIVE
  8. Optimisation of electrochemical sulphur treatment of GaSb and related semiconductors: application to surface passivation of GaSb/In(Al)GaAsSb TPV cells
  9. Passivation of GaN surface by chemical bath deposition of thin CdS layers
  10. Phase relationships in annealed Cu-Al-O layers
  11. Photothermal investigations of SiC thermal properties

  12. Relationship between condition of deposition and properties of W-Ti-N thin films prepared by reactive magnetron sputtering

  13. p-type conducting ZnO: fabrication and characterisation
  14. Structural analysis of reactively sputtered W-Ti-N thin films
  15. Study of Long-Term Stability of Ohmic Contacts to GaN
  16. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  17. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  18. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  19. Transparent p-type ZnO obtained by Ag doping



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