Phase relationships in annealed Cu-Al-O layers
|Jerzy Ciosek 1,3, Wojciech Paszkowicz 2, Jan Kubicki 3, Anna Piotrowska 1, Andrzej Kudła 1, Tomasz R. Przesławski 1, Piotr Pankowski 2, Roman Minikayev 2,4|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
Complex materials structures based on Cu-Al-O layer on silicon and fused silica were studied. The Al-O and Cu-O film was deposited by reactive sputtering method. We used a CO2 laser and furnace methods to change the structure of the Cu-Al-O layer.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium D, by Jerzy Ciosek
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-05-27 12:57 Revised: 2009-06-08 12:55
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