Sensitive InGaAs /InP (SI) magnetic field sensors

Tomasz R. Przesławski Andrzej Wolkenberg 1Kazimierz Regiński Janusz Kaniewski 1

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland


On the basis of experimental data, it has been shown that at room temperature undoped n-type MBE In0.53Ga0.47As/InPins as a film (t=4 μ m) with Hall electron mobility μ H=0.7 m2/Vs and carrier concentration nH=2.25 1020 m-3 as well MOCVD In0.53Ga0.47As/InPins (t=2.7 μ m) with μ H=1.2 m2/Vs and nH=1.3 1021 m-3 can be used both for the Hall sensors and magnetoresistive elements. The calculations were performed for the case, that length to width ratio of a sensor (l/w)=1.
For the MBE sample the absolute sensitivity γ 0 defining maximal output voltage of the Hall Sensor (HS) and the current-related sensitivity γ deduced from the measurement results are γ 0=1.1 VT-1, γ =5600 Ω T-1, respectively.We found magnetoresistor current sensitivity SI~800 Ω T-1 and voltage sensitivity SV~0.5 T-1 for the layer. For the MOCVD sample γ 0=0.26 VT-1, γ =1320 Ω T-1, respectively. We found magnetoresistor current sensitivity SI~600 Ω T-1 and voltage sensitivity SV~0.5 T-1 for the layer. Similary for 1 μ m thick nH=8.5 1023 m-3, μ H=0.5 m2/Vs we obtained the values of the parameters γ 0=0.003 VT-1, γ =5.6 Ω T-1 and SI~1. Ω T-1, SV~0.05 T-1.


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Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Tomasz R. Przesławski
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-06 10:24
Revised:   2009-06-08 12:55