X-ray measurements of type II InAs/GaSb superlattice in a wide angular range using the P08 beamline at PETRAIII

Iwona Sankowska 1Jaroslaw Domagala 1,2Oleksandr Yefanov 3,4Agata Jasik 1Kazimierz Regiński 1Oliver H. Seeck 4

1. Institute of Electron Technology, Al. Lotnikow 32/46, Warsaw 02-668, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. V.Lashkarev Institute of Semiconductor Physics, Kiev 03680, Ukraine
4. Deutsches Electronen Synchrotron DESY, Notkestraße 85, Hamburg D-22607, Germany


The aim of this work was to characterize the type II InAs/GaSb superlattice (SL). In such structure several flat layers form a period which is then repeated tens or hundreds of times. The quality of the SL depends on the reproducibility of the layers parameters, such as composition, strain and thickness, in different periods during whole growth process. The quality of the grown superlattice can be judged by the contrast and full width at half maximum (FWHM) of satellite peaks observed in diffraction profile, especially for higher orders [1]. This is the reason why as many as possible higher order satellite peaks should be measured.  In this paper we investigated InAs/GaSb superlattice formed by 30 periods, each consisted of four layers. The thicknesses of each layer were few nanometers and less. It is quite difficult to maintain a constant thickness of such thin layers in different periods during the growth process, therefore the quality control of the grown SL is crucial.

Figure 1. Experimental diffraction profile of the 004 reflection for a InAs/GaSb superlattice  measured at a laboratory diffractometer.

Figure 1 shows the diffraction curve of the 004 reflection of investigated periodic structure measured in our laboratory by a high resolution diffractometer. The substrate S and satellite peaks are presented. As can be seen, the intensities of higher ordered peaks (±4; ±5) are very low. These peaks are important to measure the quality of periodic structure, but due to the fast drop of diffracted intensity far from a Bragg peak, the flux, produced by a laboratory source, is too low to achieve enough signal for higher order peaks. For this purpose the wide angle X-ray diffraction measurement on the beamline P08 at PETRAIII, DESY has been carried out. Numerous satellite peaks which are present on 2θ/ω in Fig. 2 confirm good reproducibility of the layers parameters in different periods. Furthermore, due to the big range of the scattering angles (2θ), two satellite groups belonging to the 002 and 004 reflections are observed.  It can be seen from the Fig.2 that the SL peaks of these two groups do not coincide what may incorrectly suggest that the periodicity of the structure is not maintained.

Figure 2. Synchrotron diffraction pattern of periodic InAs/GaSb structure measured around the 002 and 004 substrate reflections.

Calculations of the diffraction pattern of the investigated superlattice have been performed. X-ray diffraction curve was simulated by using a commercial software. As can be seen from Fig. 3, only one reflection 004 was calculated for the wide angle range. The conventional 2-wave diffraction theory cannot describe correctly the measured diffraction curve. Therefore, we will present the N-beam dynamical diffraction approach [2] which makes possible to simulate diffraction pattern in a broad angular range including several reflection (in this case three). Results of this calculation for a high quality superlattice will be presented.

Figure 3. Comparison of experimental synchrotron profile (black line) with simulated one (gray line).

Acknowledgements: The authors would like to thank J. Kaniewski for helpful cooperation. This work was partially supported by the Polish Ministry of Science and Higher Education under projects  No. PBZ- MNiSW 02/I/2007 and NCBiR No. 02 0023 06.




[1] D.K. Bowen, B.K. Tanner, High Resolution X-ray Diffractometry and Topography, Taylor & Francis Ltd, London, (1998) pp 140

[2] O.M. Yefanov, V.P. Kladko, V.F. Machulin, V.B. Molodkin, Dynamical X-rays Diffraction in Multilayered Structures. Kiev: Naukova Dumka (2008)


Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/24583 must be provided.


Related papers
  1. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  2. GaN substrates with variable surface miscut for laser diode applications
  3. Far field pattern of AlGaN cladding free blue laser diodes grown by PAMBE
  4. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
  5. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  6. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
  7. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
  8. Monocrystalline character of ZnMgTe shell in the core-shell ZnTe/ZnMgTe nanowires
  9. Surface morphology of InGaN layers
  10. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  11. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
  12. Structure of Si:Mn annealed under enhanced stress conditions
  13. Effect of high pressure annealing on defect structure of GaMnAs
  14. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  15. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  16. X-ray Diffraction as a Tool of InGaN layer Characterization.
  17. Structural inhomogenities in GdCa4O(BO3)3 single crystals
  18. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
  19. Distribution of strain in laterally overgrown GaAs layers determined by x-ray diffraction
  20. Determination of stress in composite engineered substrates for GaN-based RF power devices
  21. Effect of stress on structural transformations in GaMnAs
  22. Effects of composition grading at the heterointefaces and Layers Thickness Variations on Bragg Mirror Quality
  23. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  24. Bowing of epitaxial structures grown on bulk GaN substrates
  25. MBE growth and characterization of InAs/GaAs for infrared detectors
  26. Defects in GaMnAs - influence of annealing and growth conditions
  27. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
  28. Lattice parameters changes of GaMnAs layers induced by annealing
  29. Sensitive InGaAs /InP (SI) magnetic field sensors

Presentation: Oral at IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego, by Iwona Sankowska
See On-line Journal of IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

Submitted: 2011-06-15 09:49
Revised:   2011-09-16 18:39