Increasing research activity on GaMnAs gave in recent years considerable improvements of it's magnetic and electrical properties, in particular significant increase of paramagnetic-to-ferromagnetic phase transition temperature (Tc), from 110 K to 150 K (170 K in some particular case). Even though the methods of fabrication of GaMnAs with the highest Tc are more or less established and repeated by many research groups, it is not fully understood what lies behind the empirical procedures rendering GaMnAs the highest Tc. It is generally accepted that the control of structural defects present in GaMnAs in large concentrations is a key factor for it's magnetic and transport properties, though the overall picture of GaMnAs defect structure is still quite fuzzy. As is well known in the case of LT GaAs, the use of low growth temperatures during Molecular Beam Epitaxial deposition of GaMnAs thin films implicates existence of variety of different structural defects such as As antisites, Ga and As vacancies, As interstitials etc.. Addition of Mn into LT GaAs makes the situation even more complicated, since Mn creates new defects states. At present the main interest has been addressed to Mn interstitials reported to be present in GaMnAs, before, mainly As antisites were concerned. Since both types of defects: Mn_I and As_Ga are present in GaMnAs in large concentrations (of the order of 0.5% - 2%), they both have to be taken into account to explain GaMnAs properties. In this work we demonstrate how to control independently both types of defect and what is their influence on structural, magnetic and transport properties of GaMnAs.

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1. Defect distribution along needle-shaped PrVO₄ single crystals grown by the slow-cooling method
2. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
3. GaN substrates with variable surface miscut for laser diode applications
4. Optical properties of GaAs:Mn nanowires
5. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
6. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
7. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
8. Stany Mn 3d w paśmie walencyjnym Ga_1-xMn_xSb
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12. Monocrystalline character of ZnMgTe shell in the core-shell ZnTe/ZnMgTe nanowires
13. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
14. Surface morphology of InGaN layers
15. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
16. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
17. Structure of Si:Mn annealed under enhanced stress conditions
18. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
19. Effect of high pressure annealing on defect structure of GaMnAs
20. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
21. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
22. X-ray Diffraction as a Tool of InGaN layer Characterization.
23. Structural inhomogenities in GdCa₄O(BO₃)₃ single crystals
24. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
25. Distribution of strain in laterally overgrown GaAs layers determined by x-ray diffraction
26. Determination of stress in composite engineered substrates for GaN-based RF power devices
27. Effect of stress on structural transformations in GaMnAs
28. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
29. Tunneling Anisotropic Magnetoresistance effect in p⁺-(Ga,Mn)As/n⁺-GaAs Esaki diode structure.
30. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
31. Structure properties of bulk ZnO crystals
32. Formation of epitaxial MnSb and MnBi layers on GaMnAs
33. Magnetotransport properties of ultrathin GaMnAs layers
34. Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers
35. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film
36. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
37. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
38. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
39. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
40. Bowing of epitaxial structures grown on bulk GaN substrates
41. MBE growth and characterization of InAs/GaAs for infrared detectors
42. Photoemission study of the LT-GaAs
43. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
44. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
45. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
46. Lattice parameters changes of GaMnAs layers induced by annealing
47. Structural and optical properties of high temperature and high pressure treated Si:H,D
48. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods