Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
|Jaroslaw Domagala 1, Wojciech Paszkowicz 1, Jadwiga Bak-Misiuk 1, Olga Ermakova 1, Hanna Dabkowska 2|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
Rare earth orthovanadates (RVO4) crystallizing in the tetragonal zircon-type structure have been reported to be applicable as scintillators, as laser and optical waveguide materials, as catalysts and to be useful for remote thermometry. Applications such as laser-directed ones require the use of defect-free crystals, as discussed in refs. [1, 2]. The defect structure strongly depends on the applied growth technology as well as on the doping details. Slow cooling method is known to provide crystals of small dimension but of relatively good quality [3, 4]. A limited information on growth of PrVO4 single crystals can be found in literature, and very little is known about the nature and density of defect occurring in such crystals. Yadawa et al.  have concluded that the electrical conductivity of flux-grown PrVO4 single crystal is due to the point defects presence in the crystal. Nakahara et al.  have reported that the floating-zone-grown crystals do not contain macroscopic defects.
Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 5, by Wojciech Paszkowicz
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-05-08 00:38 Revised: 2013-05-08 00:38
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