Magnetic anisotropy and structural properties of ferromagnet/MgO/ferromagnet system
|Leszek Gladczuk , Piotr Pankowski , Marek Baran , Piotr Dluzewski , Wojciech Paszkowicz , Marek Wojcik , Piotr Przyslupski|
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
Magnetic tunnel junctions (MTJ) with MgO barriers so far have shown the highest tunelling magnetoresistance effect (TMR). Such structures are potentially important for device applications. The tunneling mechanism in MTJ with MgO barrier is different from these where amorphous AlOx is used.
We have fabricated and studied the role of the bottom and upper electrode on the growth mechanism of the epitaxial MgO barriers in M1/MgO/M2 trilayer structures by means of XRD, NMR and TEM techniques. As an M1 and M2 electrodes we used Co, Fe and CoFe layers. Our preliminary results by means of NMR method indicated different chemical short range ordering in bottom and upper electrodes.
Presentation: Poster at E-MRS Fall Meeting 2006, Symposium K, by Leszek Gladczuk
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-15 16:38 Revised: 2009-06-07 00:44
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