Magnetic tunnel junctions (MTJ) with MgO barriers so far have shown the highest tunelling magnetoresistance effect (TMR). Such structures are potentially important for device applications. The tunneling mechanism in MTJ with MgO barrier is different from these where amorphous AlO_x is used.

We have fabricated and studied the role of the bottom and upper electrode on the growth mechanism of the epitaxial MgO barriers in M₁/MgO/M₂ trilayer structures by means of XRD, NMR and TEM techniques. As an M₁ and M₂ electrodes we used Co, Fe and CoFe layers. Our preliminary results by means of NMR method indicated different chemical short range ordering in bottom and upper electrodes.

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