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Lattice parameters changes of GaMnAs layers induced by annealing
|Jaroslaw Domagala , Jadwiga Bak-Misiuk 1, Janusz Sadowski 1,2, Artem Shalimov 1, Jadwiga Trela 1|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
A lot of efforts have been recently concentrated on investigation of ferromagnetic semiconductors due to their potential application for spintronic devices . Ferromagnetic GaMnAs is one of materials most interesting for these purposes. The lattice parameter of Ga1-xMnxAs (aL) increases linearly with the Mn content up to x about 0.1. However, different scientific groups (e.g. ) presented rather non-consistent data concerning the aL value dependence on the Mn content. It has been reported, that these discrepancies are due to the presence of different defects, namely of manganese interstitials and arsenic antisites in GaMnAs .
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Jaroslaw Domagala
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-14 10:59 Revised: 2009-06-08 12:55