dr Janusz Sadowski

Affiliation:

Polish Academy of Sciences, Institute of Physics

Affiliation:

Lund University, MAX-lab

Participant:

E-MRS Fall Meeting 2003

Participant:

E-MRS Fall Meeting 2006

Participant:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Publications:

1. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
2. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
3. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
4. Defects in GaMnAs - influence of annealing and growth conditions
5. Effect of high pressure annealing on defect structure of GaMnAs
6. Effect of stress on structural transformations in GaMnAs
7. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
8. Formation of epitaxial MnSb and MnBi layers on GaMnAs
9. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
10. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
11. Lattice parameters changes of GaMnAs layers induced by annealing
12. Magnetotransport properties of ultrathin GaMnAs layers
13. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
14. Optical properties of GaAs:Mn nanowires

15. Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers

16. Photoemission study of the LT-GaAs
17. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain

18. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film

19. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
20. Stany Mn 3d w paśmie walencyjnym Ga_1-xMn_xSb
21. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
22. Tunneling Anisotropic Magnetoresistance effect in p⁺-(Ga,Mn)As/n⁺-GaAs Esaki diode structure.