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Structure of Si:Mn annealed under enhanced stress conditions

Jadwiga Bak-Misiuk ¹, Przemysław Romanowski ¹, Elzbieta Dynowska ¹, Artem Shalimov ¹, Andrzej Misiuk ², Slawomir Kret ¹, Piotr Dłużewski ¹, Adam Barcz ^1,2, Jaroslaw Domagala ¹, Wolfgang Caliebe ³, Jerzy Dąbrowski ¹

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
3. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany

Abstract

Silicon implanted with Mn (Si:Mn) is magnetically ordered after appropriate annealing [1]. This work concerns the Si:Mn structure as well as its dependence on temperature during implantation, T_s, and on subsequent annealing parameters.

Si:Mn was prepared by implantation of Czochralski silicon with 160 keV Mn⁺ ions at T_s = 340 K and 610 K to a dose 1x10¹⁶ cm^-2. Si:Mn was processed at temperature, T_a, up to 1270 K for up to 10 h under ambient (10⁵ Pa) and enhanced Ar hydrostatic pressure (HP, up to 1.2 GPa). Concentration profile of Mn was measured by SIMS; the defect structure was determined by high resolution X-Ray diffraction and diffraction in the grazing incidence geometry (synchrotron).

The near–surface area of Si:Mn implanted at T_s = 340 K is amorphous. In the case of implantation at T_s = 610 K, this area is better ordered, with well-defined layered structure, while the buried layer is polycrystalline. Subsequent annealing of Si:Mn results in re-crystallization of disturbed layer and formation of the Mn₄Si₇ phase (Fig. 1). These effects depend, among others, on T_s, T_a and HP. After processing at 1270 K, the samples implanted at T_s = 340 K indicated the presence of dislocation loops while vacancies and / or interstitials were formed in Si:Mn prepared at 610 K. The treatments under 10⁵ Pa and under HP result, respectively, in the dominating presence of interstitials and vacancies.

Our results help to understand the origin of magnetic ordering in Si:Mn.

Fig. 1. Powder diffraction patterns in grazing incidence geometry for Si:Mn implanted at T_s = 340 K (a) and 610 K (b): 1 - as-implanted; 2 - annealed for 1 h at 610 K under 10⁵ Pa; 3, 4 - annealed for 1 h at 870 K under 10⁵ Pa and 1.1 GPa, respectively.

References:
[1] M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, G. G. Ramos, G. Agnello, V. P. LaBella, Phys. Rev. B, 71 (2005) 033302.

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Structure of Si:Mn annealed under enhanced stress conditions

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium H, by Przemysław Romanowski See On-line Journal of E-MRS Fall Meeting 2007 Submitted: 2007-08-03 13:15 Revised: 2009-06-07 00:44

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium H, by Przemysław Romanowski
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-08-03 13:15 Revised: 2009-06-07 00:44