Recent developments in the fields of integrated circuits, technology of CDs, and large volume information transmission resulted in still growing interest in optical and spectral properties of silicon - related materials, in particular produced basing on single crystalline Czochralski grown silicon, Cz - Si. Electronic states related to the presence of structural defects and impurities in Si:O,H,… - related materials [1] are still intensively investigated.

In the presented work, Si:O,H,… samples prepared by implantation technique, and processed at up to 1400 K (HT) under enhanced hydrostatic pressure in argon atmosphere (HP, up to 1.2 GPa) have been investigated. It has been shown that the HT - HP treatment of implanted samples leads to the formation of nano - clusters. The nano - sized structure formation in the samples results in essential changes of optical and spectral properties, being dependent on the HT - HP processing parameters.

The nature and mechanism of nano - sized structure formation in implanted single crystalline silicon, especially in Si:O and Si:H, subjected to complex processing [2, 3], and the effects of HT – HP treatment on spectral characteristics this materials are discussed. Usefulness of such materials for producing of sensors has been demonstrated.

1. A. Misiuk, B.M. Efros. Pressure-induced transformations during annealing of silicon implanted with oxygen: Physics and Technology High Pressure, 16 (2006) 49.
2. A.M. Prudnikov, A. Misiuk, I.E. Tyschenko, B.M. Efros. Solid state transitions investigations in DAC by spectroscopy methods: Defect and Diffusion Forum, 208-209 (2002) 315.
3. W. Wieteska, W. Wierzchowski, W. Graeff, A. Misiuk, A. Barcz, L. Bryja, V.P. Popov: Acta Phys. Polon. A, 102 (2002) 239.

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1. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
2. Microstructure of silicon implanted with transition metals
3. Structure of Si:Mn annealed under enhanced stress conditions
4. Substructure of the metal nanomaterials after the intensive external influence
5. Effect of high pressure annealing on defect structure of GaMnAs
6. Observation of defects in g - irradiated Cz-si annealed under high pressure
7. Effect of stress on structural transformations in GaMnAs
8. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
9. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
10. Structure and Magnetization of Defect-Associated Sites in Silicon
11. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
12. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
13. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
14. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
15. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
16. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
17. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
18. Structural and optical properties of high temperature and high pressure treated Si:H,D
19. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
20. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
21. Effect of the DAC treatment on the nanomaterials of type Si-O
22. Solid State Transitions Investigations in DAC by Spectroscopy Methods