Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
|Andrzej Misiuk 1, M. Prujszczyk 1, Rostyslav V. Shalayev 2, Evgeny Shemchenko 2, Boris M. Efros 2, Anatoly Prudnikov 2, Alexander Yakovec 2|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
Recent developments in the fields of integrated circuits, technology of CDs, and large volume information transmission resulted in still growing interest in optical and spectral properties of silicon - related materials, in particular produced basing on single crystalline Czochralski grown silicon, Cz - Si. Electronic states related to the presence of structural defects and impurities in Si:O,H,… - related materials  are still intensively investigated.
In the presented work, Si:O,H,… samples prepared by implantation technique, and processed at up to 1400 K (HT) under enhanced hydrostatic pressure in argon atmosphere (HP, up to 1.2 GPa) have been investigated. It has been shown that the HT - HP treatment of implanted samples leads to the formation of nano - clusters. The nano - sized structure formation in the samples results in essential changes of optical and spectral properties, being dependent on the HT - HP processing parameters.
The nature and mechanism of nano - sized structure formation in implanted single crystalline silicon, especially in Si:O and Si:H, subjected to complex processing [2, 3], and the effects of HT – HP treatment on spectral characteristics this materials are discussed. Usefulness of such materials for producing of sensors has been demonstrated.
Presentation: Poster at E-MRS Fall Meeting 2007, Acta Materialia Gold Medal Workshop, by Rostyslav V. Shalayev
See On-line Journal of E-MRS Fall Meeting 2007
Submitted: 2007-05-14 07:32 Revised: 2009-06-07 00:44
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