Nowadays, the problem of producing nanomaterials with 10-100 nm grain size is among the main actively developing scientific problems. It is already known that such materials possess unique physical and mechanical characteristics. In this respect, the reviewed paper aimed at the intensive external influence on sub-structure of nanometals is urgent.

The investigation objects were polycrystalline iridium, tungsten, nickel and copper metals of 99.95-99.99 % purity (with the initial grain size » 20-50 mm). The field ion microscopy which is practically the unique method providing the direct experimental observation of separate atoms constituting of sample, was taken as the basis one.

The object of investigation by field ion microscopy is various metals. In our experiments we took iridium, nickel, tungsten and copper pretreated with intensive external influence (ion implantation and severe plastic deformation).

Some interesting results have been obtained in this work. For example, it has been revealed that in nano-iridium influenced by severe plastic deformation a nanostructure is formed (the grain size of 20-30 nm), but in the bodies of grains there are practically no defects of structure, however, after implantation a sub-nano structure, (sub-grain size of 3-5 nm) is formed, and in the bodies of sub-grains there are defects.

The sub-nano structure in the surface and near-surface volumes of iridium was for the first time found as the resulting from the implantation of argon ions at distances, which are the order of magnitude larger than the projective path of argon ions from the irradiated surface.

The obtained results are enough new, they are important for doing investigations in the fields of nanotechnology and nanostructure materials science.

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1. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
2. Microstructure of silicon implanted with transition metals
3. Structure of Si:Mn annealed under enhanced stress conditions
4. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
5. Effect of high pressure annealing on defect structure of GaMnAs
6. Observation of defects in g - irradiated Cz-si annealed under high pressure
7. Effect of stress on structural transformations in GaMnAs
8. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
9. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
10. Structure and Magnetization of Defect-Associated Sites in Silicon
11. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
12. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
13. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
14. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
15. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
16. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
17. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
18. Structural and optical properties of high temperature and high pressure treated Si:H,D
19. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
20. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
21. Effect of the DAC treatment on the nanomaterials of type Si-O
22. Solid State Transitions Investigations in DAC by Spectroscopy Methods