Silicon doped with manganese is a potential material for future spintronic device application.  Due to limited solubility of Mn in silicon [1], various non-equilibrium techniques [2] have been used to introduce Mn into silicon beyond its solubility limit.  Ion implantation is a technique for introduction of magnetic atoms into semiconductors that can, in principle, result in the high dopant densities and to control the dopant placement.  Here we report our investigation on the microstructure of single crystalline silicon implanted with  transition metal ions by transmission electron microscopy (TEM) and Secondary Ion Mass Spectrometry (SIMS). 

The implantation of transition metals into silicon with subsequent annealing results in dopant re-distribution [3] strongly influenced not only by the implantation conditions and implantation-relateddamage but alsoby microstructural changes, precipitation, surface segregation, and silicide formation.  Our implantation has been carried out with Mn, Cr, and V ions with varying beam energy and substrate temperatures.  The subsequent thermal anneals were done at temperatures from 300 °C to 1000 °C under flow of Ar gas.  The results obtained by SIMS and TEM analysis will be discussed and correlated with magnetic characterization.

References

[1] F. Shimura, Semiconductor Silicon Crystal Technology (Academic, San Diego, 1989).

[2] L. Zeng, E. Helgren, M. Rahimi, F. Hellman, R. Islam, B. J. Wilkens, R. J. Culbertson, and D. J. Smith, Phys. Rev. B 77, 073306 (2008).

[3] P. Zhang, F. Stevie, R. Vanfleet, R. Neelakantan, M. Klimov, D. Zhou, and L. Chow, J. Appl. Phys. 96, 1053 (2004).

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