Czochralski grown single crystalline silicon, Cz-Si, contains oxygen admixture, in a concentration up to about 0.004 %, typically in the form of interstitials, Oi. At annealing Oi's are gathering creating oxygen and silicon containing clusters with increasing (with annealing temperature) dimensions. In particular, annealing of Cz-Si at about 720 K results in producing of the oxygen-silicon nanoclusters exhibiting electrical activity (thermal donors, TDs [1]).
Thermoelectric properties of Cz-Si with different concentrations of TDs were investigated in this work at quasi-hydrostatic pressures (HP) up to 16 GPa. The Cz-Si samples were cut from the (001) oriented Cz-Si wafers sujected to prolonged pre-annealing (up to 40 h) under atmospheric pressure to create TDs, as determined by infrared (FTIR) and electrical measurements.
Thermopower of TDs-containing Cz-Si was measured in the pressure apparatus with anvils from synthetic diamond and hard alloy [2]. The X-Ray emission spectra were determined using the ultrasoft spectrometer; some microhardness characteristics of TDs-containing Cz-Si were also determined.
Calculation of the electronic structure of investigated samples was performed in the Local Spin Density approximation. Among others it has been stated that:
- the absolute value of thermoelectric power is depentent on the TDs concentration; it decreases with HP up to HP = 7-10 GPa, at which pressures the transition to the metallic phase takes place; - the transition pressure as well as other HP - related characteristics of the Cz-Si samples are dependent on the TDs concentration. It has been proven that the thermoelectric power measured under HP is highly sensitive to the changed concentration of oxygen nanoclusters (TDs) and of other microdefects.
The work was supported by RFBR 01-02-17203.
1. A.Misiuk, Int. Conf. on Solid State Crystals, Zakopane-Poland 2000, SPIE Proc., Vol. 4412 (2001)85.
2. V.V.Shchennikov, Fiz.Met.Metal., 67 (1989)93.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/543 must be provided.

1. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
2. Microstructure of silicon implanted with transition metals
3. Structure of Si:Mn annealed under enhanced stress conditions
4. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
5. Substructure of the metal nanomaterials after the intensive external influence
6. Effect of high pressure annealing on defect structure of GaMnAs
7. Observation of defects in g - irradiated Cz-si annealed under high pressure
8. Effect of stress on structural transformations in GaMnAs
9. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
10. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
11. Structure and Magnetization of Defect-Associated Sites in Silicon
12. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
13. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
14. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
15. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
16. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
17. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
18. Raman spectra of misfit layer semiconductor structure (PbS)0.59TiS2 under variation of laser power
19. Multi-component structures with varying configuration
20. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
21. Structural and optical properties of high temperature and high pressure treated Si:H,D
22. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
23. Thermo- and galvanomagnetic characterisation of heterophase structures with variable configuration of inclusions
24. Investigation of PbSe single crystals under the neutron irradiation
25. Automated setup for ultrahigh pressure treatment of materials
26. Effect of the DAC treatment on the nanomaterials of type Si-O
27. Combined Technique of High Pressure Testing of Materials up to 30 GPa
28. Magnetoresistance and Thermoelectric Power of Various Type of Semiconductors at High Pressures up to 30 Gpa
29. High Pressure Treatment and Analysis of Heterophase Structures