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Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing

Guangyu Chai 1Lee Chow 1Andrzej Misiuk 2Adam Barcz 3Arun Shunmugavelu 1Eun S. Choi 4Richard Vanfleet 5M. Prujszczyk 2

1. University of Central Florida, Orlando, FL, United States
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
4. National High Magnetic Field Laboratory (NHMFL), Tallahassee, FL 32310-3706, United States
5. Brigham Young University, Provo, UT 84602, United States


Re-distribution of Mn+ implanted Czochralski silicon (CzSi:Mn) and floating zone silicon (FzSi:Mn) after thermal annealing between 300ºC and 1000ºC has been studied using secondary ion mass spectrometry (SIMS). The silicon substrates were implanted with 160 keV Mn+ ion to a dose of 1×1016 cm-2 at room temperature and at 310ºC. The Mn profiles after annealing above 900ºC showed multiple concentration peaks for the samples implanted at room temperature, indicating the influence of defect structures on the diffusion behavior. For the Si sample that was implanted at 310ºC, only one concentration peak was observed. The SIMS depth profiles were compared with recent reports [1,2] of depth profiles of Mn implanted silicon. We also carried out cross sectional TEM and magnetization measurements to correlate the micro-structural and magnetization data with depth profile obtained by SIMS.

[1] M. Bolduc, C. Awo-Affouda, F. Ramos, and V. P. LaBella, J. Vac. Sci. Technol. A 24(4), 1648 (2006).

[2] A. Misiuk, J. Bak-Misiuk, B. Surma, W. Osinniy, M. Szot, T. Story, J. Jagielski, J. Alloys Comp., 423, 201 (2006).


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Submitted: 2007-01-14 01:49
Revised:   2009-06-07 00:44