Recently ferromagnetic hysteresis has been observed at room temperature in single crystalline silicon wafers implanted with Si or Ar ions, and also in silicon wafers irradiated with high flux of neutron beam [1]. The authors suggested that the paramagnetic defects created during implantation or irradiation maybe are among the factors responsible for the observed magnetic behavior. These results could also have important implications on the magnetic behaviors of metal implanted silicon wafers [2,3].

To better understand the mechanisms of the reported ferromagnetic hyseresis loop, we carry out high resolution transmission electron microscopic and magnetic study of Fz-Si and Cz-Si silicon wafers damaged, to produce different kinds of defects, by three different methods: (a) irradiation with 2.5 MeV electrons at a flux of 1×10¹⁷ cm^-2, (b) self-implantion with 150 keV Si⁺ ions at a flux of 2×10¹⁶ cm^-2, and (c) implantion with 20 keV He⁺ ions at an angle of 60° and at a flux of 1×10¹⁷ cm^-2. The results of these studies will be reported.

References

1. T. Dubruca, J. Hack, R.E. Hummel, and A. Angerhofer, Appl. Phys. Lett. 88, 182504 (2006).
2. M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M.B. Huang, F. Ramos, G. Agnello, V. P. LaBella, Phys. Rev., B71, 033302 (2005).
3. P. R. Bandaru, J. Park, J. S. Lee, Y. J. Tang, L. H. Chen, S. Jin, S. A. Song, and J. R. O’Brien, Appl. Phys. Lett. 89, 112502 (2006).

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