The effects of treatment of helium implanted Czochralski grown silicon (Cz-Si:He, He ion dose up to 10(17)cm(-2),at energy up to 300 keV) at HT up to 1400 K under hydrostatic pressure, HP, up to 1.2 GPa are investigated by transmission electron microscopy, photoluminescence and X-Ray methods.

The treatment at up to 920 K under HP results in a creation of buried nano-structured layers containing thin-walled He-filled cavities and bubbles.

The Cz-Si:He samples treated at even higher HT indicate the presence of dislocated (defected) buried layers; their structure depends strongly on HP applied.

HP affects diffusivity of implanted helium and of implantation - induced point defects and thus promotes a creation of smaller but more numerous cavities / bubbles as well as of other defects near the range of implanted helium ions.

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