Oxygen as the main impurity has the multiple influence on silicon crystals. It has been confirmed that nitrogen can enhance the formation of oxygen precipitates while it suppress the formation of voids. It has been reported that external stress influences the formation of oxygen precipitates. But few results related to oxygen precipitates generated under high pressures (HP) at high temperatures (HT) were reported.
In this paper, we investigate microstructure of nitrogen doped Czochralski silicon (NCZ) treated under 1.2 GPa at 1000 - 1570 K by means of PL, TEM, FTIR and X-Ray methods.
In NCZ and CZ-Si treated at 1230 K under 1 GPa, the strong D1 dislocation-related PL peak at about 0.81eV was observed. After the treatment at 1400K under 1 GPa, the D1 as well as D4 lines were detected in the NCZ silicon, of the higher intensity if compared with the case of CZ-Si treated at the same conditions. PL at 1.1 eV related to interband transition was of higher intensity in NCZ.

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