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Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
|Deren Yang 1, Jin Xu 1, Andrzej Misiuk 2, Barbara Surma 2,3, Jadwiga Bak-Misiuk|
1. Zhejiang University, Stete Key Lab of Silicon Materials (ZJU), Zhe Da Lu 38, Hangzhou 310027, China
Oxygen as the main impurity has the multiple influence on silicon crystals. It has been confirmed that nitrogen can enhance the formation of oxygen precipitates while it suppress the formation of voids. It has been reported that external stress influences the formation of oxygen precipitates. But few results related to oxygen precipitates generated under high pressures (HP) at high temperatures (HT) were reported.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium B, by Deren Yang
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-09 02:59 Revised: 2009-06-08 12:55