Crystalline silicon is the major material used in both of microelectronic and photovoltaic industry. In the last decades, to lower the cost and improve the quality of crystalline silicon wafers has widely attracted research attention.

Germanium-doped crystalline silicon including both of Czochralski (CZ) silicon and multicrystalline (mc) has developed and intensively investigated by my group since 2002. It was reported that Ge-doping in CZ silicon could suppress void defects, increase oxygen precipitation, improve internal gettering and so on. Moreover, mechanical strength in CZ silicon is also increased by Ge-doping. Therefore, it is believed that Ge-doped CZ silicon should be benefit for integrated circuits (ICs). In fact, it has been used in IC industry last several years.

In this presentation, the behavior of Ge-doped crystalline silicon including both of the CZ silicon and mc silicon which are used for solar cells have been reported. It is believed that Ge-doping could increase the mechanical strength and decrease the breakage of silicon wafers. Meanwhile, the light induced degradation which is considered to be related to boron-oxygen complexes is suppressed in CZ silicon. Therefore, more power will be generated in the modules based on Ge-doped CZ silicon wafers. These findings suggest that Ge-doped crystallie silicon is a promising material for manufacturing the high-efficiency and low-cost solar cells.

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