X-ray diffraction methods as well as transmission electron microscopy were used to study the controlled doping and structural homogeneity of Cd_xHg_1-xTe epitaxial layers. The investigated layers were obtained by the evaporation-condensation-diffusion (ECD) method in the process of isothermal growth. Two types of substrates for Cd_xHg_1-xTe ECD growth were used: (110) and (111) CdTe monocrystals with As ion implanted surface layer at dose <5×10¹⁵ cm² and 100 keV energy. Structural changes in damaged areas of CdTe crystals that arise at the ion beam implantation as well the influence of radiation defects on the dopant diffusion process and quality of obtained layers are analyzed.

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