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HgCdMnZnTe: growth and physical properties

Sergey Ostapov 2Igor Gorbatyuk 2Sergiy Dremlyuzhenko 2Vladimir Zhikharevich 2Ilariy M. Rarenko 2Ruslan M. Zaplitnyy 2Igor M. Fodchuk 2Vitalij G. Deibuk 2Miroslav L. Kovalchuk 2Nina Popenko 3Igor Ivanchenko 3A. Zhigalov 3Sergey Karelin 3Yaroslav Olikh 1Mykola Tymochko 1

1. Institute for Physics of Semiconductors of NAS of Ukraine, 45 Prospekt Nauki, Kyiv 03028, Ukraine
2. Chernivtsi National University (ChNU), 2 Kotsubinsky Str., Chernivtsi 58012, Ukraine
3. A.Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences, Kharkov, Ukraine


The monocrystals of a new narrow-gap solid solution Hg1-x-y-zCdxMnyZnzTe with the content of manganese and zinc up to 5% are presented. X-ray and mechanical investigations of these crystals have been carried out and their basic electrophysical parameters such as the band-gap energy, the intrinsic carriers’ concentration, the impurity state of samples, and the mobility of charge carriers have been determined. It is shown that a new material has the perfect crystal structure and high microhardness. The empirical formulas for calculations of band-gap energy and intrinsic carrier concentration of monocrystals like that are suggested.
The influence of ultrasonic loading on the galvanomagnetic effects in the Hg1-x-y-zCdxMnyZnzTe monocrystals have been investigated.
The obtained data allow announcing this material as an alternative one for infrared detectors for 3 - 5 μm and 8 - 14 μm spectral ranges.


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Presentation: poster at E-MRS Fall Meeting 2005, Symposium B, by Sergey Ostapov
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-18 10:45
Revised:   2009-06-07 00:44